| PART |
Description |
Maker |
| 2SA1075 2SA1076 |
160V PNP silicon general purpose high speed power transistor
SILICON HIGH SPEED POWER TRANSISTOR
|
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| ISL83485 ISL83485IB ISL83485IP ISL83483 ISL83488 I |
N-CHANNEL SILICON JUNCTION FET SOT23
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85
3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers LINE TRANSCEIVER, PDSO8
3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers LINE TRANSCEIVER, PDIP8
3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceivers
3.3V Low Power High Speed or Slew Rate Limited RS-485/RS-422 Transceivers
There is no valid match for the device number entered.
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| BUF508A |
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SJ479 2SJ479L 2SJ479S |
Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| BUL52AFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
|
| BUL64A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| FJP5304D FJP5304DTU |
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
